IRF9Z34N

หน้าแรก » IRF9Z34N

มอสเฟต IRF9Z34N (MOSFET)

VDSS = -55V / RDS(on) = 0.10Ω / ID = -19A

• Advanced Process Technology

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• P-Channel

• Fully Avalanche Rated

Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low  on-resistance per silicon area.  This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.  The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.

ดาวน์โหลด Datasheet IRF9Z34N : คลิ๊กที่นี่

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