IRFZ34N

หน้าแรก » IRFZ34N

มอสเฟต IRFZ34N (MOSFET)

VDSS = 55V / RDS(on) = 0.040Ω / ID = 29A

• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Ease of Paralleling

Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.  The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.

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